Publications

Displaying 23 publications
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Journal Article

  1. M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016. Digital object identifier
  2. M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016. Digital object identifier
  3. M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016. Digital object identifier
  4. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  5. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  6. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  7. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002. Digital object identifier
  8. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. S. D. March, A. H. Jones, A. K. Rockwell, M. Ren, Y. Chen, M. E. Woodson, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Modeling and Measurement of Carrier Trapping and Tunneling in AlxIn1-xAsySb1-y Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  2. M. Ren, M. E. Woodson, Y. Chen, J. C. Campbell, S. J. Maddox, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 29th IEEE Photonics Conference (IPC), Waikoloa Village, HI, Oct 2016.
  3. S. J. Maddox, M. Ren, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "Low-Noise High-Gain Tunneling Staircase Photodetector," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
  4. (Late News) M. Ren, S. J. Maddox, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
  5. (Invited) M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlxIn1-xAsySb1-y (x: 0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2016.
  6. S. R. Bank, H. B. Yuen, W. Ha, V. Gambin, M. A. Wistey, and J. S. Harris, "Strong Photoluminescence Enhancement of 1. 3 \µm GaInNAs Active Layers by Introduction of Antimony," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.
  7. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," Proc. 18th IEEE International Semiconductor Laser Conf. (ISLC), Garmisch, Germany, Sep 2002.
  8. V. Gambin, V. Lordi, W. Ha, M. A. Wistey, K. Volz, S. R. Bank, H. B. Yuen, and J. S. Harris, "High Intensity 1. 3\—1. 6 \µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb)," International Conf. on Molecular Beam Epitaxy (MBE), San Fancisco, CA, Sep 2002.
  9. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," International Conf. on Molecular Beam Epitaxy (MBE), San Francisco, CA, Sep 2002.
  10. V. Gambin, W. Ha, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long Wavelength, High Efficiency Photoluminescence from MBE Grown GaInNAsSb," 44th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2002.
  11. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," 60th Device Research Conf. (DRC), Santa Barbara, CA, Jun 2002.
  12. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "Long Wavelength GaInNAs(Sb) Lasers on GaAs," 14th International Conf. on Indium-Phosphide and Related Materials (IPRM), Stockholm, Sweden, May 2002.
  13. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Kim, "Long wavelength GaInNAs(Sb) lasers on GaAs," Lasers and Electro-Optics, 2002. CLEO 02. Technical Digest. Summaries of Papers Presented at the, Long Beach, CA, pp. 269-270, May 2002. Digital object identifier
  14. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "Long Wavelength GaInNAs(Sb) Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Long Beach, CA, May 2002.
  15. V. Lordi, V. Gambin, W. Ha, S. R. Bank, and J. S. Harris, "Examination of N Incorporation into GaInNAs," Materials Research Symposium (MRS), April, Apr 2002.