Publications

Displaying 61 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. J. Kopaczek, F. Dybala, S. J. Zelewski, N. Sokolowski, W. Zuraw, K. M. McNicholas, R. H. El-Jaroudi, R. C. White, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP," Journal of Physics D: Applied Physics, vol. 55, no. 1, pp. 015107, Oct 2021. Digital object identifier
  3. K. M. McNicholas, R. H. El-Jaroudi, and S. R. Bank, "Kinetically Limited Molecular Beam Epitaxy of BxGa1–xAs Alloys," Journal of Crystal Growth \& Design, vol. 21, no. 11, pp. 6076-6082, Sep 2021. Digital object identifier
  4. R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. J. Nordin, and S. R. Bank, "Room-temperature photoluminescence and electroluminescence of 1. 3-\&microm-range BGaInAs quantum wells on GaAs substrates," Applied Physics Letters, vol. 117, pp. 021102, Jul 2020. Digital object identifier
  5. R. Kudrawiec, M. Polak, K. M. McNicholas, J. Kopaczek, M. A. Wistey, and S. R. Bank, "Bowing of the band gap and spin-orbit splitting energy in BGaAs," Materials Research Express, vol. 6, no. 12, pp. 125913, Jan 2020. Digital object identifier
  6. E. M. Krivoy, A. P. Vasudev, S. Rahimi, R. A. Synowicki, K. M. McNicholas, D. J. Ironside, R. Salas, G. Kelp, D. Jung, H. P. Nair, G. Shvets, D. Akinwande, M. L. Lee, M. L. Brongersma, and S. R. Bank, "Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics," ACS Photonics, vol. 5, pp. 3051-3056, Jul 2018. Digital object identifier
  7. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sep 2017. Digital object identifier
  8. Z. Wu, G. Kelp, M. N. Yogeesh, W. Li, K. M. McNicholas, A. F. Briggs, B. B.Rajeeva, D. Akinwande, S. R. Bank, G. Shvets, and Y. Zheng, "Dual-Band Moire Metasurface Patches for Multifunctional Biomedical Applications," Nanoscale, vol. 8, pp. 18461, Sep 2016. Digital object identifier
  9. Z. Wu, W. Li, M. N. Yogeesh, S. Jung, A. Lynghi. Lee, K. M. McNicholas, A. F. Briggs, S. R. Bank, M. A. Belkin, D. Akinwande, and Y. Zheng, "Tunable Graphene Metasurfaces with Gradient Features by Self-Assembly-Based Moire Nanosphere Lithography," Advanced Optical Materials, Aug 2016. Digital object identifier
  10. R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 108, no. 18, pp. 182102, May 2016. Digital object identifier
  11. W. Zhu, S. Park, M. N. Yogeesh, K. M. McNicholas, S. R. Bank, and D. Akinwande, "Black phosphorus flexible thin film transistors at gigahertz frequencies," Nano Letters, vol. 16, no. 4, pp. 2301-2306, Mar 2016. Digital object identifier
  12. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, and S. R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 106, no. 8, pp. 081103, Feb 2015. Digital object identifier
  13. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  14. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  15. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier
  16. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005. Digital object identifier
  17. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  18. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  19. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  20. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  21. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002. Digital object identifier
  22. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, I. A. Gulyas, R. C. White, K. M. McNicholas, T. Dey, S. R. Bank, and M. A. Wistey, "Effect of B-In interactions on the band structure and optical properties of BGa(In)As," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  2. R. H. El-Jaroudi, K. M. McNicholas, P. Dhingra, R. C. White, Q. Meng, M. A. Wistey, M. L. Lee, and S. R. Bank, "B-III-V/GaAs quantum wells: towards 1. 55 \&microm emitters on GaAs," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  3. K. M. McNicholas, R. H. El-Jaroudi, J. Kopaczek, A. H. Jones, D. J. Ironside, R. Judrawiec, J. C. Campbell, and S. R. Bank, "Progress towards B-III-V optoelectronic devices on silicon," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  4. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, J. Kopaczek, R. Kudrawiec, and S. R. Bank, "BGaInAs/GaAs quantum wells for 1. 3µm lasers," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  5. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, I. E. Olivares, R. C. White, J. A. McArthur, and S. R. Bank, "Boron Alloys for GaAs-based 1. 3μm Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2019.
  6. S. R. Bank, K. M. McNicholas, R. H. El-Jaroudi, A. K. Rockwell, T. Golding, R. Droopad, J. Shao, W. K. Jamison, G. Wicks, and G. Savich, "Improved MWIR LED arrays on Si Substrates for Scene Projectors," IEEE RAPID, Miramar Beach, FL, Aug 2018.
  7. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  8. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  9. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  10. K. M. McNicholas, R. H. El-Jaroudi, A. F. Briggs, S. D. March, S. D. Sifferman, and S. R. Bank, "Growth and properties of B-III-V alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  11. A. K. Rockwell, M. E. Woodson, M. Ren, K. M. McNicholas, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Surfactant-Mediated Epitaxy of III-V Digital Alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  12. K. M. McNicholas, R. Salas, S. D. Sifferman, D. Jung, M. L. Lee, and S. R. Bank, "Growth rate dependent surface morphology of rare earth arsenide films," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  13. S. D. Sifferman, A. K. Rockwell, K. M. McNicholas, Y. Sun, R. Salas, S. J. Maddox, H. P. Nair, M. L. Lee, and S. R. Bank, "The effects of a bismuth flux on strained-layer III-V optical materials," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  14. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  15. K. M. McNicholas, E. M. Krivoy, R. Salas, S. D. Sifferman, and S. R. Bank, "Tunable, lattice-matched, epitaxial semimetals," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  16. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, M. L. Lee, and S. R. Bank, "Surfactant-Mediated Growth of RE-As:InGaAs Nanocomposites," International Molecular Beam Epitaxy Conf. (IMBE), Flagstaff, AZ, Sep 2014.
  17. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. J. Ironside, E. M. Krivoy, S. J. Maddox, D. Jung, M. L. Lee, and S. R. Bank, "Properties of RE-As:InGaAs Nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  18. K. M. McNicholas, E. M. Krivoy, R. Salas, and S. R. Bank, "GdAs Thin Films Grown By Molecular Beam Epitaxy," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  19. M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
  20. M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.
  21. M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007. Digital object identifier
  22. U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
  23. (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007. Digital object identifier
  24. S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
  25. (Plenary) M. J. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, and P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits," 64th Device Research Conf. (DRC), State College, PA, Jun 2006.
  26. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  27. M. A. Wistey, S. R. Bank, H. B. Yuen, V. Gambin, and J. S. Harris, "Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  28. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.