Publications
Journal Article
- A. J. Muhowski, A. M. Skipper, S. D. March, M. J. Rodwell, and S. R. Bank, "A true hero of the trade: On the critical contributions of Art Gossard to modern device techonology," Journal of Vacuum Science \& Technology A, vol. 39, no. 2, pp. 020804, Feb 2021.
- W. Zhong, Y. Zhao, B. Zhu, J. Sha, E. S. Walker, S. R. Bank, Y. Chen, D. Akinwande, and L. Tao, "Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111)," Nanotechnology, vol. 31, no. 47, Sep 2020.
- G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009.
- U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009.
- U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008.
- A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," APL, vol. 91, no. 19, pp. 192114, Nov 2007.
Conference Paper
- A. M. Skipper, Y. Fang, F. He, A. J. Muhowski, D. J. Ironside, D. Wasserman, Y. Wang, M. J. Rodwell, and S. R. Bank, "Monolithic Integration of Patterned Metal-Dielectric Stacks Overgrown with III-V Semiconductors by Molecular Beam Epitaxy," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
- A. M. Skipper, D. J. Ironside, Y. Fang, J. van. de Groep, J. Song, P. Dhingra, M. L. Lee, M. L. Brongersma, M. J. Rodwell, and S. R. Bank, "Epitaxial Integration of Arbitrarily Patterned Metal Nanostructures for Photonic Applications," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
- M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.
- M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
- M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007.
- U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
- (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007.
- A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, S. R. Bank, E. Brown, and M. J. Rodwell, "Metal/semiconductor Heterostructures for Terahertz Applications," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
- S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
- (Plenary) M. J. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, and P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits," 64th Device Research Conf. (DRC), State College, PA, Jun 2006.