Publications

Displaying 34 publications
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Journal Article

  1. F. He, N. T. Sheehan, S. R. Bank, and Y. Wang, "Giant electron-phonon coupling detected under surface plasmon resonance in Au film," Opt. Lett., vol. 44, no. 18, pp. 4590-4593, Sep 2019. Digital object identifier
  2. K. Chen, X. Meng, F. He, Y. Zhou, J. Jeong, N. T. Sheehan, S. R. Bank, and Y. Wang, "Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 4, pp. 348-359, Aug 2018. Digital object identifier
  3. K. Chen, N. T. Sheehan, F. He, X. Meng, S. C. Mason, S. R. Bank, and Y. Wang, "Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique," ACS Photonics, vol. 4, pp. 1440-1446, May 2017. Digital object identifier
  4. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  5. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  6. W. Sun, Z. Lu, X. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, and S. R. Bank, "High-Gain InAs Avalanche Photodiodes," IEEE J. of Quantum Electron., vol. 49, no. 2, pp. 154, Feb 2013. Digital object identifier
  7. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping," APL, vol. 101, no. 15, pp. 151124, Oct 2012. Digital object identifier

Conference Paper

  1. R. C. White, M. K. Bergthold, A. F. Ricks, F. A. Estévez, D. Wasserman, and S. R. Bank, "Bismuth Incorporation into InSb Towards Long-Wave Infrared Photodetectors," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Selective Area Regrowth of High Aspect Ratio Microstructures," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  4. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "InSb-Based Dilute-Bismide Alloys Towards Long-Wave Infrared Sensing," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  5. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  6. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "Optical and Structural Properties of InSb-Based Dilute-Bismide Alloys Grown by Molecular Beam Epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  7. R. C. White, M. K. Bergthold, A. J. Muhowski, Y. Wang, I. Okoro, D. Wasserman, and S. R. Bank, "Lattice-Matched InAsSbBi Photodetectors for Long-Wave Infrared Sensing," 81st Device Research Conf. (DRC), Santa Barbara, CA, Jun 2023.
  8. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  10. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  11. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  12. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  13. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  14. (Invited) S. R. Bank, A. K. Rockwell, S. J. Maddox, W. Sun, and J. C. Campbell, "Digital Alloy Growth of AlInAsSb for Low Noise Avalanche Photodetectors," 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, Aug 2016.
  15. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  16. (Invited) S. R. Bank, S. J. Maddox, S. D. March, W. Sun, M. Ren, and J. C. Campbell, "Advances in IR APD materials research," SPIE Defense and Commercial Sensing, Baltimore, MD, Apr 2016.
  17. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  18. (Invited) S. R. Bank, S. J. Maddox, W. Sun, H. P. Nair, and J. C. Campbell, "Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)," Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications (SPIE), San Diego, CA, vol. 9555, pp. 955509, Aug 2015. Digital object identifier
  19. (Invited) S. R. Bank, S. J. Maddox, W. Sun, H. P. Nair, and J. C. Campbell, "Recent progress in high gain InAs avalanche photodiodes," SPIE Optics and Photonics Meeting (SPIE_OPM), San Diego, CA, Aug 2015.
  20. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  21. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  22. S. J. Maddox, S. D. March, W. Sun, J. C. Campbell, and S. R. Bank, "Growth and Properties of Broadly Tunable AlInAsSb Digital Alloys on GaSb," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  23. W. Sun, S. J. Maddox, S. R. Bank, and J. C. Campbell, "Room Temperature High-Gain InAs/AlAsSb Avalanche Photodiode," IEEE Photonics Conf. (IPC), San Diego, CA, Oct 2014.
  24. W. Sun, S. J. Maddox, S. R. Bank, and J. C. Campbell, "Record High Gain from InAs Avalanche Photodiodes at Room Temperature," 72nd Device Research Conf. (DRC), Santa Barbara, Ca, Jun 2014.
  25. H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, and S. R. Bank, "3. 4 \µm Diode Lasers Employing Al-Free GaInAsSb/GaSb MQW Active Regions at 20°C," 71st Device Research Conf. (DRC), South Bend, IN, Jun 2013.
  26. W. Sun, S. J. Maddox, Z. Lu, H. P. Nair, X. Zheng, S. R. Bank, and J. C. Campbell, "Charge-Compensated High Gain InAs Avalanche Photodiodes," IEEE Photonics Conf. (IPC), Burlingame, CA, Sep 2012.
  27. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "InAs Avalanche Photodiode with Improved Electric Field Uniformity," 70th Device Research Conf. (DRC), State College, PA, Jun 2012.