Publications

Displaying 24 publications
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Journal Article

  1. F. He, N. T. Sheehan, S. R. Bank, and Y. Wang, "Giant electron-phonon coupling detected under surface plasmon resonance in Au film," Opt. Lett., vol. 44, no. 18, pp. 4590-4593, Sep 2019. Digital object identifier
  2. K. Chen, X. Meng, F. He, Y. Zhou, J. Jeong, N. T. Sheehan, S. R. Bank, and Y. Wang, "Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 4, pp. 348-359, Aug 2018. Digital object identifier
  3. K. Chen, N. T. Sheehan, F. He, X. Meng, S. C. Mason, S. R. Bank, and Y. Wang, "Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique," ACS Photonics, vol. 4, pp. 1440-1446, May 2017. Digital object identifier
  4. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  5. S. Yang, R. Salas, E. M. Krivoy, H. P. Nair, S. R. Bank, and M. Jarrahi, "Characterization of ErAs:GaAs and LuAs:GaAs Superlattice Structures for Continuous-Wave Terahertz Wave Generation through Plasmonic Photomixing," J. of Infrared, Millimeter, and Terahertz Waves, pp. 1-9, Feb 2016. Digital object identifier
  6. N. T. Yardimci, R. Salas, E. M. Krivoy, H. P. Nair, S. R. Bank, and M. Jarrahi, "Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters," OSA Optics Express, vol. 23, no. 25, pp. 32035-32043, Dec 2015. Digital object identifier
  7. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier

Conference Paper

  1. J. Duncan, R. Ramesh, A. F. Ricks, M. Brown, Z. Sakotic, F. A. Estévez, F. Shafiei, M. W. Downer, D. Wasserman, and S. R. Bank, "Optical Structuring to Reliably Determine Interband Optical Nonlinearity via Second Harmonic Generation," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. K. C. Wen, P. Devaney, R. Ramesh, A. F. Ricks, Q. Meng, Z. Sakotic, D. Wasserman, J. B. Khurgin, and S. R. Bank, "Semiconductor Quantum Well Structures with Large Third-order Interband Optical Nonlinearities," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. P. Devaney, K. C. Wen, R. Ramesh, N. Irwin, A. F. Ricks, S. Shakkottai, and S. R. Bank, "Blackbox Machine Learning for Nonlinear Materials Design," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. A. F. Ricks, K. C. Wen, M. Brown, Z. Sakotic, M. Waqar, X. Pan, D. Wasserman, and S. R. Bank, "Coupled Quantum Well Interface Quality and Second-Harmonic Generation Effects," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  5. A. F. Ricks, R. C. White, Q. Meng, H. Hijazi, M. A. Wistey, and S. R. Bank, "Bismuth Incorporation in AlInSb for an Improved Barrier Layer Material," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  6. R. C. White, M. K. Bergthold, A. F. Ricks, F. A. Estévez, D. Wasserman, and S. R. Bank, "Bismuth Incorporation into InSb Towards Long-Wave Infrared Photodetectors," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  7. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "InSb-Based Dilute-Bismide Alloys Towards Long-Wave Infrared Sensing," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  8. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "Optical and Structural Properties of InSb-Based Dilute-Bismide Alloys Grown by Molecular Beam Epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  10. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  11. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  12. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  13. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  14. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  15. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  16. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  17. H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, and S. R. Bank, "3. 4 \µm Diode Lasers Employing Al-Free GaInAsSb/GaSb MQW Active Regions at 20°C," 71st Device Research Conf. (DRC), South Bend, IN, Jun 2013.