Publications

Displaying 16 publications
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Journal Article

  1. J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024. Digital object identifier
  2. R. C. White, M. Bergthold, A. Muhowski, L. Nordin, I. Okoro, H. Hijazi, L. Feldman, D. Wasserman, and S. R. Bank, "Molecular beam epitaxy of InAsSbBi lattice-matched to InSb toward long-wave infrared sensing," Crystal Growth & Design, vol. 24, no. 21, pp. 8727-8735, Oct 2024. Digital object identifier
  3. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Simulations for InAlAs digital alloy avalanche photodiodes," Applied Physics Letters, vol. 115, no. 17, pp. 171106, Oct 2019. Digital object identifier
  4. F. He, N. T. Sheehan, S. R. Bank, and Y. Wang, "Giant electron-phonon coupling detected under surface plasmon resonance in Au film," Opt. Lett., vol. 44, no. 18, pp. 4590-4593, Sep 2019. Digital object identifier
  5. Y. Yuan, A. K. Rockwell, Y. Peng, J. Zheng, S. D. March, A. H. Jones, S. R. Bank, and J. C. Campbell, "Comparison of Different Period Digital Alloy Al0. 7InAsSb Avalanche Photodiodes," Journal of Lightwave Technology, vol. 37, no. 14, pp. 3647-3654, May 2019. Digital object identifier
  6. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Digital Alloy InAlAs Avalanche Photodiodes," Journal of Lightwave Technology, vol. 36, no. 17, pp. 3580-3585, Sep 2018. Digital object identifier
  7. Y. Yuan, J. Zheng, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys," Photon. Res., vol. 6, no. 8, pp. 794-799, Aug 2018. Digital object identifier
  8. K. Chen, X. Meng, F. He, Y. Zhou, J. Jeong, N. T. Sheehan, S. R. Bank, and Y. Wang, "Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 4, pp. 348-359, Aug 2018. Digital object identifier
  9. K. Chen, N. T. Sheehan, F. He, X. Meng, S. C. Mason, S. R. Bank, and Y. Wang, "Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique," ACS Photonics, vol. 4, pp. 1440-1446, May 2017. Digital object identifier
  10. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  11. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier

Conference Paper

  1. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  2. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  3. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  4. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  5. H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, and S. R. Bank, "3. 4 \µm Diode Lasers Employing Al-Free GaInAsSb/GaSb MQW Active Regions at 20°C," 71st Device Research Conf. (DRC), South Bend, IN, Jun 2013.