Publications

Displaying 8 publications
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Journal Article

  1. N. D. Foster, A. K. Rockwell, J. A. McArthur, B. S. Mendoza, S. R. Bank, and M. C. Downer, "A Study of Second-Order Susceptibility in Digital Alloy-Grown InAs/AlSb Multiple Quantum Wells," Advanced Optical Materials, vol. 10, no. 2192845, May 2022. Digital object identifier
  2. A. F. Briggs, L. J. Nordin, A. J. Muhowski, P. Petluru, D. Silva, D. Wasserman, and S. R. Bank, "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots," Applied Physics Letters, vol. 116, pp. 061103, Feb 2020. Digital object identifier
  3. A. Hosseini, D. Kwong, Y. Zhang, S. A. Chandorkar, F. Crnogorac, A. Carlson, B. Fallah, S. R. Bank, E. Tutuc, J. Rogers, F. W. Pease, and R. T. Chen, "On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems," J. Vac. Sci. Technol. B, vol. 28, no. 6, pp. C6O1-C6O7, Nov 2010. Digital object identifier
  4. Y. Chen, Y. Zhao, A. Hosseini, D. Kwong, W. Jiang, S. R. Bank, E. Tutuc, and R. T. Chen, "Delay-Time-Enhanced Flat-Band Photonic Crystal Waveguides with Capsule-Shaped Holes on Silicon Nanomembrane," IEEE J. Sel. Topics Quantum Electron., vol. 15, no. 5, pp. 1510-1514, Sep 2009. Digital object identifier

Conference Paper

  1. N. D. Foster, A. K. Rockwell, J. A. McArthur, M. Santoyo, S. R. Bank, and M. C. Downer, "Measurement of chi(2) of III-V quantum well structures," Bulletin of the American Physical Society, Mar 2021.
  2. K. Li, E. Simmons, A. F. Briggs, J. Xu, Y. Cheng, R. T. Chen, S. R. Bank, V. A. Podolskiy, and D. Wasserman, "Hyperbolic Metamaterial Photonic Funnels," Conference on Lasers and Electro-Optics (CLEO), Washington, DC, Jun 2020.
  3. N. D. Foster, A. K. Rockwell, S. R. Bank, and M. C. Downer, "Analysis of chi(2) of III-V quantum-well structures using transfer matrix techniques," American Physical Society March Meeting (APS), Denver, CO, Mar 2020.
  4. A. F. Briggs, D. Silva, L. J. Nordin, D. Wasserman, and S. R. Bank, "Tunable InGaSb Emitters Coupled with InAs:Si through Molecular Beam Epitaxy," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.