Publications

Displaying 6 publications
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Journal Article

  1. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Strain dependence of Auger recombination in 3 \&microm GaInAsSb/GaSb type-I active regions," Applied Physics Letters, vol. 116, pp. 262103, Jun 2020. Digital object identifier
  2. A. F. Briggs, L. J. Nordin, A. J. Muhowski, P. Petluru, D. Silva, D. Wasserman, and S. R. Bank, "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots," Applied Physics Letters, vol. 116, pp. 061103, Feb 2020. Digital object identifier
  3. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier

Conference Paper

  1. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Strained Mid-Infrared Quantum Wells," Conf. on Lasers and Electro Optics (CLEO), Washington, DC, May 2020.
  2. A. F. Briggs, D. Silva, L. J. Nordin, D. Wasserman, and S. R. Bank, "Tunable InGaSb Emitters Coupled with InAs:Si through Molecular Beam Epitaxy," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  3. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.