Publications

Displaying 6 publications
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Journal Article

  1. J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024. Digital object identifier
  2. R. C. White, M. Bergthold, A. Muhowski, L. Nordin, I. Okoro, H. Hijazi, L. Feldman, D. Wasserman, and S. R. Bank, "Molecular beam epitaxy of InAsSbBi lattice-matched to InSb toward long-wave infrared sensing," Crystal Growth & Design, vol. 24, no. 21, pp. 8727-8735, Oct 2024. Digital object identifier
  3. A. F. Briggs, L. J. Nordin, A. J. Muhowski, P. Petluru, D. Silva, D. Wasserman, and S. R. Bank, "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots," Applied Physics Letters, vol. 116, pp. 061103, Feb 2020. Digital object identifier
  4. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier

Conference Paper

  1. A. F. Briggs, D. Silva, L. J. Nordin, D. Wasserman, and S. R. Bank, "Tunable InGaSb Emitters Coupled with InAs:Si through Molecular Beam Epitaxy," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  2. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.