Publications

Displaying 151 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, R. Salas, J. C. Campbell, and S. R. Bank, "Demonstration of the AlInAsSb Cascaded Multiplier Avalanche Photodiode," Applied Physics Letters, vol. 123, no. 4, pp. 041106, Jul 2023. Digital object identifier
  2. D. J. Ironside, R. Salas, P. Chen, K. Q. Le, A. Alu, and S. R. Bank, "Enhancing THz generation in photomixers using a metamaterial approach," Optics Express, vol. 27, no. 7, pp. 9481-9494, Mar 2019. Digital object identifier
  3. E. M. Krivoy, A. P. Vasudev, S. Rahimi, R. A. Synowicki, K. M. McNicholas, D. J. Ironside, R. Salas, G. Kelp, D. Jung, H. P. Nair, G. Shvets, D. Akinwande, M. L. Lee, M. L. Brongersma, and S. R. Bank, "Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics," ACS Photonics, vol. 5, pp. 3051-3056, Jul 2018. Digital object identifier
  4. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sep 2017. Digital object identifier
  5. R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 108, no. 18, pp. 182102, May 2016. Digital object identifier
  6. S. Yang, R. Salas, E. M. Krivoy, H. P. Nair, S. R. Bank, and M. Jarrahi, "Characterization of ErAs:GaAs and LuAs:GaAs Superlattice Structures for Continuous-Wave Terahertz Wave Generation through Plasmonic Photomixing," J. of Infrared, Millimeter, and Terahertz Waves, pp. 1-9, Feb 2016. Digital object identifier
  7. N. T. Yardimci, R. Salas, E. M. Krivoy, H. P. Nair, S. R. Bank, and M. Jarrahi, "Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters," OSA Optics Express, vol. 23, no. 25, pp. 32035-32043, Dec 2015. Digital object identifier
  8. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  9. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, and S. R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 106, no. 8, pp. 081103, Feb 2015. Digital object identifier
  10. K. Appaiah, R. Salas, S. Vishwanath, and S. R. Bank, "Offset Coupling, Feedback, and Spatial Multiplexing in 4 × 4 Incoherent-MIMO Multimode Fiber Links," IEEE/OSA J. Lightw. Technol., vol. 31, no. 17, pp. 2926-2939, Aug 2013. Digital object identifier
  11. S. Rahimi, E. M. Krivoy, J. Lee, M. E. Michael, S. R. Bank, and D. Akinwande, "Temperature dependence of the electrical resistivity of LaLuAs," AIP Advances, vol. 3, no. 8, pp. 082102, Jul 2013. Digital object identifier
  12. E. M. Krivoy, S. Rahimi, H. P. Nair, R. Salas, S. J. Maddox, D. J. Ironside, Y. Jiang, G. Kelp, G. Shvets, D. Akinwande, and S. R. Bank, "Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers," APL, vol. 101, no. 22, pp. 221908, Nov 2012. Digital object identifier
  13. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  14. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier
  15. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  16. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  17. Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008. Digital object identifier
  18. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  19. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  20. M. M. Oye, T. J. Mattord, G. A. Hallock, S. R. Bank, M. A. Wistey, J. M. Reifsnider, A. J. Ptak, H. B. Yuen, J. S. Harris, and A. L. Holmes Jr., "Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy," APL, vol. 91, no. 19, pp. 191903, Sep 2007. Digital object identifier
  21. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  22. D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, A. J. Ptak, S. W. Johnston, D. J. Friedman, and S. R. Kurtz, "Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy," J. Appl. Phys., vol. 101, pp. 114916-1, Jun 2007. Digital object identifier
  23. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  24. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  25. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  26. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  27. Y. Xin, A. Stintz, H. Cao, L. Zhang, A. Gray, S. R. Bank, M. Osinski, J. S. Harris, and L. F. Lester, "Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates," Proc. SPIE, Proc. SPIE, San Jose, CA, vol. 6468, pp. 46, Jan 2007.
  28. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  29. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  30. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006. Digital object identifier
  31. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  32. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006. Digital object identifier
  33. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  34. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  35. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006. Digital object identifier
  36. G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris, "Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector," APL, vol. 87, no. 26, pp. 262503, Dec 2005. Digital object identifier
  37. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "On the temperature sensitivity of 1. 5-\µm GaInNAsSb lasers," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 1089-1098, Sep 2005. Digital object identifier
  38. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  39. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005. Digital object identifier
  40. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  41. M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes Jr., S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides," APL, vol. 86, no. 22, pp. 221902, May 2005. Digital object identifier
  42. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  43. M. A. Wistey, S. R. Bank, H. B. Yuen, J. S. Harris, M. M. Oye, and A. L. Holmes Jr., "Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 460-464, May 2005. Digital object identifier
  44. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen plasma optimization for high-quality dilute nitrides," J. Cryst. Growth, vol. 278, no. 1-4, pp. 229-233, May 2005. Digital object identifier
  45. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," Proc. SPIE, vol. 2, pp. 2-5, Apr 2005. Digital object identifier
  46. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1. 5-\µm GaInNAsSb/GaAs lasers," J. Appl. Phys., vol. 97, no. 8, pp. 083101, Apr 2005. Digital object identifier
  47. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  48. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Friedrich, "Nearest-neighbor distributions in Ga1-xInxNyAs1-y and Ga1-xInxNyAs1-y-zSbz thin films upon annealing," Phys. Rev. B, vol. 71, no. 12, pp. 125309, Mar 2005. Digital object identifier
  49. R. Kudrawiec, P. Sitarek, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance," APL, vol. 86, no. 9, pp. 091115, Feb 2005. Digital object identifier
  50. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier