Publications

Displaying 13 publications
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Journal Article

  1. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  2. Z. Wu, G. Kelp, M. N. Yogeesh, W. Li, K. M. McNicholas, A. F. Briggs, B. B.Rajeeva, D. Akinwande, S. R. Bank, G. Shvets, and Y. Zheng, "Dual-Band Moire Metasurface Patches for Multifunctional Biomedical Applications," Nanoscale, vol. 8, pp. 18461, Sep 2016. Digital object identifier
  3. Z. Wu, W. Li, M. N. Yogeesh, S. Jung, A. Lynghi. Lee, K. M. McNicholas, A. F. Briggs, S. R. Bank, M. A. Belkin, D. Akinwande, and Y. Zheng, "Tunable Graphene Metasurfaces with Gradient Features by Self-Assembly-Based Moire Nanosphere Lithography," Advanced Optical Materials, Aug 2016. Digital object identifier
  4. W. Zhu, S. Park, M. N. Yogeesh, K. M. McNicholas, S. R. Bank, and D. Akinwande, "Black phosphorus flexible thin film transistors at gigahertz frequencies," Nano Letters, vol. 16, no. 4, pp. 2301-2306, Mar 2016. Digital object identifier
  5. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  6. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  7. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier

Conference Paper

  1. M. Ren, S. J. Maddox, Y. Chan, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Low excess noise AlInAsSb staircase avalanche photodiode," 2015 73rd Annual Device Research Conference (DRC), Columbus, Ohio, Jun 2015.
  2. E. S. Walker, W. Li, S. Guchhait, M. N. Yogeesh, F. He, Y. Wang, D. Akinwande, and S. R. Bank, "In Situ Oxidation of Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  3. M. Ren, S. J. Maddox, Y. Chan, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlInAsSb Staircase Avalanche Photodiode," 73rd Device Research Conf. (DRC), Columbus, OH, Jun 2015.
  4. E. S. Walker, E. M. Krivoy, M. N. Yogeesh, D. Akinwande, and S. R. Bank, "Semiconducting Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  5. M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
  6. M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.