Publications

Displaying 5 publications
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Journal Article

  1. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier

Conference Paper

  1. M. C. Cassidy, J. Duncan, A. M. García, W. J. Doyle, D. Wasserman, and S. R. Bank, "Selective Area Regrowth for Chipscale Trapped Atom/Ion Quantum Systems," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. E. Y. Wang, J. A. McArthur, A. A. Dadey, M. Fetters, A. W. K. Liu, J. M. Fastenau, J. C. Campbell, and S. R. Bank, "Growth and characterization of Alx In1-x Asy Sb1-y digital alloys on InP on Si," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  4. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.