Publications

Displaying 5 publications
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Journal Article

  1. F. He, E. S. Walker, Y. Zhou, R. D. Montano, S. R. Bank, and Y. Wang, "Phase transition in epitaxial bismuth nanofilms," Applied Physics Letters, vol. 117, no. 7, pp. 073103, Aug 2020. Digital object identifier
  2. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier

Conference Paper

  1. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. M. C. Cassidy, J. Duncan, A. M. García, W. J. Doyle, D. Wasserman, and S. R. Bank, "Selective Area Regrowth for Chipscale Trapped Atom/Ion Quantum Systems," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.