Publications

Displaying 8 publications
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Conference Paper

  1. M. C. Cassidy, J. Duncan, A. M. García, W. J. Doyle, D. Wasserman, and S. R. Bank, "Selective Area Regrowth for Chipscale Trapped Atom/Ion Quantum Systems," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. E. Y. Wang, H. Karimi, M. Waqar, X. Pan, J. C. Campbell, and S. R. Bank, "Growth and Characterization of Ternary-Containing AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. E. Y. Wang, J. A. McArthur, H. Karimi, P. Devaney, J. C. Campbell, and S. R. Bank, "Effect of Varying Period Structure on Tunneling Current in AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  5. J. A. McArthur, A. A. Dadey, E. Y. Wang, H. Karimi, J. C. Campbell, and S. R. Bank, "Suppressing AlInAsSb Avalanche Photodiode Dark Currents by Tuning the Absorption Region," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  6. J. A. McArthur, H. Karimi, L. Sauer, J. C. Campbell, and S. R. Bank, "Manipulating the opto-electronic properties of AlInAsSb digital alloys by adjusting the period thickness," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  7. M. Ren, S. J. Maddox, Y. Chan, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Low excess noise AlInAsSb staircase avalanche photodiode," 2015 73rd Annual Device Research Conference (DRC), Columbus, Ohio, Jun 2015.
  8. M. Ren, S. J. Maddox, Y. Chan, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlInAsSb Staircase Avalanche Photodiode," 73rd Device Research Conf. (DRC), Columbus, OH, Jun 2015.