Publications

Displaying 9 publications
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Conference Paper

  1. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  2. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  3. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  4. E. Y. Wang, J. A. McArthur, A. K. Rockwell, and S. R. Bank, "Growth and characterization of AlxIn1-xAsySb1-y digital alloys grown on InP," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  5. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  6. S. R. Bank, V. Lordi, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Temperature Dependent Behavior of GaInNAs(Sb) Alloys Grown on GaAs," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  7. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  8. V. Lordi, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Electroabsorption and Band Edge Optical Properties of GaInNAsSb Quantum Wells Around 1550nm," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  9. M. A. Wistey, S. R. Bank, H. B. Yuen, V. Gambin, and J. S. Harris, "Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.