Publications

Displaying 8 publications
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Conference Paper

  1. S. J. Maddox, A. P. Vasudev, V. D. Dasika, S. D. March, M. L. Brongersma, and S. R. Bank, "Effects of Growth Rate, Substrate Temperature, and a Bi Surfactant on Doping Limits in InAs:Si Grown by Molecular Beam Epitaxy," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  2. K. M. McNicholas, E. M. Krivoy, R. Salas, and S. R. Bank, "GdAs Thin Films Grown By Molecular Beam Epitaxy," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  3. A. K. Rockwell, S. J. Maddox, R. Salas, V. D. Dasika, and S. R. Bank, "Rapid Thermal Annealing of Ion Implanted InAs:S for Mid-IR Plasmonics," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  4. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. J. Ironside, E. M. Krivoy, S. J. Maddox, D. Jung, M. L. Lee, and S. R. Bank, "Properties of RE-As:InGaAs Nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  5. S. D. Sifferman, J. W. Schwede, D. C. Riley, R. T. Howe, Z. Shen, N. A. Melosh, and S. R. Bank, "Compositionally-Graded Structures for Photon-Enhanced Thermionic Emitters," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  6. E. S. Walker, E. M. Krivoy, M. N. Yogeesh, D. Akinwande, and S. R. Bank, "Semiconducting Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  7. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  8. (Plenary) M. J. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, and P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits," 64th Device Research Conf. (DRC), State College, PA, Jun 2006.