Publications
Journal Article
- K. Yao, J. Fang, T. Jiang, A. F. Briggs, A. M. Skipper, Y. Kim, M. A. Belkin, B. A. Korgel, S. R. Bank, and Y. Zheng, "Tuning Multipolar Mie Scattering of Particles on a Dielectric-Covered Mirror," ACS Nano, vol. 18, pp. 16545-16555, Jun 2024.
- N. D. Foster, A. K. Rockwell, J. A. McArthur, B. S. Mendoza, S. R. Bank, and M. C. Downer, "A Study of Second-Order Susceptibility in Digital Alloy-Grown InAs/AlSb Multiple Quantum Wells," Advanced Optical Materials, vol. 10, no. 2192845, May 2022.
- Y. Liu, J. Lee, S. D. March, N. Nookala, D. Palaferri, J. F. Klem, S. R. Bank, I. Brener, and M. A. Belkin, "Difference-Frequency Generation in Polaritonic Intersubband Nonlinear Metasurfaces," Advanced Optical Materials, vol. 6, no. 20, pp. 1800681, Aug 2018.
- B. B.Rajeeva, Z. Wu, A. F. Briggs, P. V. Acharya, B. Walker, X. Peng, V. Bahadur, S. R. Bank, and Y. Zheng, "Direct-Write Printing: “Point-and-Shoot” Synthesis of Metallic Ring Arrays and Surface-Enhanced Optical Spectroscopy," Advanced Optical Materials, vol. 6, no. 10, May 2018.
- B. B.Rajeeva, Z. Wu, A. F. Briggs, P. V. Acharya, S. B. Walker, X. Peng, V. Bahadur, S. R. Bank, and Y. Zheng, "“Point‐and‐Shoot” Synthesis of Metallic Ring Arrays and Surface‐Enhanced Optical Spectroscopy," Advanced Optical Materials, vol. 6, no. 10, Mar 2018.
- T. Trivedi, A. Roy, H. C. P. Movva, E. S. Walker, S. R. Bank, D. P. Neikirk, and S. K. Banerjee, "Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators," ACS Nano, vol. 11, pp. 7457-7467, Jul 2017.
- Z. Wu, W. Li, M. N. Yogeesh, S. Jung, A. Lynghi. Lee, K. M. McNicholas, A. F. Briggs, S. R. Bank, M. A. Belkin, D. Akinwande, and Y. Zheng, "Tunable Graphene Metasurfaces with Gradient Features by Self-Assembly-Based Moire Nanosphere Lithography," Advanced Optical Materials, Aug 2016.
- R. Kudrawiec, H. P. Nair, M. Latkowska, K. Misiewics, S. R. Bank, and W. Walukiewics, "Contactless electroreflectance study of Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures," J. Appl. Phys., vol. 112, pp. 123513, Dec 2012.
- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008.
- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007.
- D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, A. J. Ptak, S. W. Johnston, D. J. Friedman, and S. R. Kurtz, "Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy," J. Appl. Phys., vol. 101, pp. 114916-1, Jun 2007.
- H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006.
- L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1. 5-\µm GaInNAsSb/GaAs lasers," J. Appl. Phys., vol. 97, no. 8, pp. 083101, Apr 2005.
- R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005.
- H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005.
- H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004.