Publications

Displaying 7 publications
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Journal Article

  1. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE J. Sel. Top. Quantum Electron., vol. 24, Aug 2018. Digital object identifier
  2. (Invited) S. J. Maddox, M. Ren, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Recent progress in avalanche photodiodes for sensing in the IR spectrum," Proc. SPIE, vol. 9854, pp. 985405-985405, Apr 2016. Digital object identifier
  3. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  4. R. D. Averitt, W. J. Padilla, H. Tong. Chen, J. F. O Hara, A. J. Taylor, C. Highstrete, M. L. Lee, J. M. O. Zide, S. R. Bank, A. C. Gossard, M. Anwar, A. J. DeMaria, and M. S. Shur, "Terahertz metamaterial devices," Proc. SPIE, vol. 6772, pp. 677209, Sep 2007. Digital object identifier
  5. Y. Xin, A. Stintz, H. Cao, L. Zhang, A. Gray, S. R. Bank, M. Osinski, J. S. Harris, and L. F. Lester, "Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates," Proc. SPIE, Proc. SPIE, San Jose, CA, vol. 6468, pp. 46, Jan 2007.
  6. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," Proc. SPIE, vol. 2, pp. 2-5, Apr 2005. Digital object identifier
  7. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, "Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)," Phys. Rev. Lett., vol. 94, no. 5, pp. 056601, Feb 2005. Digital object identifier