Publications

Displaying 6 publications

W. Zhong, Y. Zhao, B. Zhu, J. Sha, E. S. Walker, S. R. Bank, Y. Chen, D. Akinwande, and L. Tao, "Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111)," Nanotechnology, vol. 31, no. 47, Sep 2020.
A. H. Jones, A. K. Rockwell, S. D. March, Y. Yuan, S. R. Bank, and J. C. Campbell, "High Gain, Low Dark Current Al_{0. 8}In_{0. 2}As_{0. 23}Sb_{0. 77} Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 31, no. 24, pp. 1948-1951, Dec 2019.
Y. Yuan, J. Zheng, A. K. Rockwell, S. D. March, S. R. Bank, and J. C. Campbell, "AlInAsSb Impact Ionization Coefficients," IEEE Photonics Technology Letters, vol. 31, no. 4, Feb 2019.
A. K. Rockwell, Y. Yuan, A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, "Al_{0. 8}In_{0. 2}As_{0. 23}Sb_{0. 77} Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 30, pp. 1048-1051, Jun 2018.
D. Jung, J. Faucher, S. Mukherjee, A. Akey, D. J. Ironside, M. Cabral, X. Sang, J. Lebeau, S. R. Bank, T. Buonassisi, O. Moutanabbir, and M. L. Lee, "Highly tensile-strained Ge/InAlAs nanocomposites," Nature Communications, vol. 8, pp. 14204, Jan 2017.
K. W. Park, E. M. Krivoy, H. P. Nair, S. R. Bank, and E. T. Yu, "Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy," Nanotechnology, vol. 26, no. 26, pp. 265701, Jul 2015.