Publications

Displaying 37 publications
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Journal Article

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, T. Dey, M. Shamim. Reza, S. R. Bank, and M. A. Wistey, "Effects of B and In on the Band Structure of BGa(In)As Alloys," Journal of Applied Physics, vol. 132, no. 19, pp. 193104, Nov 2022. Digital object identifier
  2. R. C. White, L. J. Nordin, A. J. Muhowski, D. Wasserman, and S. R. Bank, "Photoluminescence from InSb1-xBix alloys at extended wavelengths on InSb," Applied Physics Letters, vol. 121, no. 19, pp. 191901, Nov 2022. Digital object identifier
  3. T. Dey, M. Shamim. Reza, A. W. Arbogast, M. W. Holtz, R. Droopad, S. R. Bank, and M. A. Wistey, "Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures," Applied Physics Letters, vol. 121, no. 12, pp. 122104, Sep 2022. Digital object identifier
  4. D. Chen, K. Sun, Y. Chen, A. H. Jones, A. A. Dadey, B. Guo, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model," Optics Express, vol. 30, no. 14, pp. 25262, Jul 2022. Digital object identifier
  5. A. A. Dadey, A. H. Jones, J. A. McArthur, E. Y. Wang, A. J. Muhowski, S. R. Bank, and J. C. Campbell, "Narrow bandgap Al0. 15 In0. 85As0. 77Sb0. 23 for mid-infrared photodetectors," Optics Express, vol. 30, no. 15, pp. 27285-27292, Jul 2022. Digital object identifier
  6. B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022. Digital object identifier
  7. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  8. N. D. Foster, A. K. Rockwell, J. A. McArthur, B. S. Mendoza, S. R. Bank, and M. C. Downer, "A Study of Second-Order Susceptibility in Digital Alloy-Grown InAs/AlSb Multiple Quantum Wells," Advanced Optical Materials, vol. 10, no. 2192845, May 2022. Digital object identifier
  9. R. Wang, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Infrared Al0. 15InAsSb digital alloy NBn photodetectors," Journal of Lightwave Technology, vol. 40, no. 12, pp. 3855, Feb 2022. Digital object identifier
  10. A. J. Muhowski, A. Kamboj, A. F. Briggs, L. J. Nordin, S. R. Bank, and D. Wasserman, "Cascaded InGaSb quantum dot mid-infrared LEDs," Journal of Applied Physics, vol. 131, no. 4, Jan 2022. Digital object identifier
  11. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  12. A. M. Skipper, P. Petluru, D. J. Ironside, A. M. García, A. J. Muhowski, D. Wasserman, and S. R. Bank, "All-epitaxial, laterally structured plasmonic materials," Applied Physics Letters, vol. 120, no. 16, pp. 161103, Dec 2022. Digital object identifier
  13. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  14. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  15. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  16. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  17. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier

Conference Paper

  1. J. C. Campbell, and S. R. Bank, "Recent Advances in Low-Noise Avalanche Photodiodes," 2022 IEEE Photonics Conferennce (IPC), Vancouver, BC, Canada, Nov 2022.
  2. A. A. Dadey, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Separate Absorption, Charge, and, Multiplication Avalanche Photodiode with a Digital Alloy Al0. 05In0. 95As0. 93Sb0. 07 Absorber for Mid-IR Detection," 2022 IEEE Photonics Conferennce (IPC), Vancouver, BC, Canada, Nov 2022.
  3. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Feature-Independent Molecular Beam Epitaxy (MBE) Selective Area Regrowth Towards Embedding High Aspect Ratio Microstructures," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  4. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  5. A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  6. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, J. C. Campbell, and S. R. Bank, "The Cascaded Multiplier Avalanche Photodiode," 80th Device Research Conf. (DRC), Columbus, OH, Jun 2022.
  7. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  8. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  9. E. Y. Wang, J. A. McArthur, A. K. Rockwell, and S. R. Bank, "Growth and characterization of AlxIn1-xAsySb1-y digital alloys grown on InP," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  10. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  11. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  12. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
  13. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Real-Time Ion Count from Nitrogen Plasma Source," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
  14. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-Source Molecular-Beam Epitaxy Growth of GaInNAsSb/InGaAs Single Quantum Well on InP with Photoluminescence Peak Wavelength at 2. 04 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Sep 2003.
  15. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Low Threshold, CW, Room Temperature 1. 49 \µm GaAs-Based Lasers," International Symposium on Compound Semiconductors (ISCS), San Diego, CA, Aug 2003.
  16. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Low Threshold, CW, Room Temperature 1. 49 \µm GaAs-Based Lasers," 61st Device Research Conf. (DRC) Late News, Salt Lake City, UT, Jun 2003.
  17. S. R. Bank, H. B. Yuen, W. Ha, V. Gambin, M. A. Wistey, and J. S. Harris, "Strong Photoluminescence Enhancement of 1. 3 \µm GaInNAs Active Layers by Introduction of Antimony," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.
  18. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.
  19. D. S. Gardner, S. R. Bank, L. L. Goddard, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr 2003.
  20. (Plenary) D. S. Gardner, F. Paillet, T. Karnik, R. Swanson, S. R. Bank, X. Liu, P. Griffin, J. R. Patel, and J. S. Harris, "Silicon-Based Light Emitting Devices," The AVS International Conf. on Microelectronics and Interfaces, Santa Clara, CA, Mar 2003.