Publications
Conference Paper
- A. H. Jones, Q. Meng, A. A. Dadey, R. C. White, R. H. El-Jaroudi, M. A. Wistey, S. R. Bank, and J. C. Campbell, "Thermally Characterizing BGaInAs Photodiode Alloys," CLEO 2025, pp. SS136_5, Dec 2025.
- T. Dey, A. W. Arbogast, Q. Meng, S. Reza, A. Muhowski, J. Cooper, R. S. Goldman, T. Borrely, S. R. Bank, and M. A. Wistey, "Why Room Temperature GeSn Lasers Need Carbon," 2023 IEEE Silicon Photonics Conference (SiPhotonics), pp. 1–2, Dec 2023.
- M. A. Wistey, U. Singisetti, G. Burek, A. Baraskar, V. Jain, B. Thibault, A. Nelson, and o., "Improved migration-enhanced epitaxy for self-aligned InGaAs devices," Electronic Materials Conference (EMC), Dec 2009.
- M. A. Wistey, S. R. Bank, H. Bae, H. B. Yuen, E. R. Pickett, and J. S. Harris, "Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534nm," 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, pp. 1–2, Dec 2006.
- H. B. Yuen, R. Kudrawiec, K. Ryczko, S. R. Bank, M. A. Wistey, H. P. Bae, J. Misiewicz, and J. S. Harris, "Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets," MRS Proceedings, vol. 864, pp. E3.3, Dec 2005.
- M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaNAs VCSELs at 1.46 µm," OSA Trends in Optics and Photonics Series 96, 613-614, Dec 2004.
- M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaNAs VCSELs at 1.46 ÎŒm," Conference on Lasers and Electro-Optics, 2004.(CLEO). 1, 2 pp. vol. 1, Dec 2004.
- W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. M. Kim, and J. J. S. Harris, "High-efficiency multiple-quantum-well GaInNAs/GaNAs ridge-waveguide diode lasers," SPIE Proceedings Novel In-Plane Semiconductor Lasers, vol. 4651, pp. 42, Dec 2002.