Publications
Journal Article
- M. S. Reza, T. Dey, A. W. Arbogast, Q. Meng, S. R. Bank, and M. A. Wistey, "Confinement and threshold modeling for high temperature GeSn and GeC/GeCSn lasers," IEEE J. Sel. Topics Quantum Electron., vol. 31, no. 1, pp. 1503011, Jan 2025.

- J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024.

- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, and J. Misiewicz, "The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance," physica status solidi c, vol. 5, no. 2, pp. 473–477, Dec 2008.

- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, and J. Misiewicz, "Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content," physica status solidi (a), vol. 204, no. 2, pp. 364–372, Dec 2007.

- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, and J. Misiewicz, "The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance," physica status solidi (a), vol. 204, no. 2, pp. 543–546, Dec 2007.

- A. J. Ptak, D. J. Friedman, S. Kurtz, R. C. Reedy, M. Young, D. B. Jackrel, H. B. Yuen, S. R. Bank, M. A. Wistey, and J. S. Harris, "Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 3, pp. 1540–1543, Dec 2006.

- R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5ÎŒm," Solid State Communications, vol. 137, no. 3, pp. 138–141, Dec 2006.

- R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms," Applied Surface Science, vol. 253, no. 1, pp. 152–157, Dec 2006.

- R. Kudrawiec, M. Motyka, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, and o., "Photoluminescence from as-grown and annealed GaN0. 027As0. 863Sb0. 11â GaAs single quantum wells," Journal of applied physics 98 (6), Dec 2005.
