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Journal Article

  1. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. Bae, T. Sarmiento, S. R. Bank, H. Yuen, M. Wistey, and J. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–-1.65 µm: Broadening of the fundamental transition," Appl. Phys. Lett., vol. 94, no. 3, pp. 031903, Dec 2009. Digital object identifier
  2. S. R. Bank, H. Yuen, M. Wistey, V. Lordi, H. Bae, and J. Harris, "Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs," Appl. Phys. Lett., vol. 87, no. 2, pp. 021908, Dec 2005. Digital object identifier