Publications
Journal Article
- H. Karimi, Q. Lin, E. Simmons, B. D. Aguilar, J. A. McArthur, A. Talanov, K. Circir, A. A. Dadey, E. Y. Wang, D. Chen, V. Fisher, T. Pearson, K. Dorsey, S. R. Bank, and J. C. Campbell, "Thin absorber AlInAsSb SACM APDs with photon-trapping gratings for eSWIR applications," Optica, vol. 12, no. 12, Dec 2025.

- D. J. Herrera, K. Circir, J. A. McArthur, E. Y. Wang, T. Fatema, A. Beling, S. R. Bank, and J. C. Campbell, "Edge-coupled digital alloy AlInAsSb SPAD with high avalanche breakdown probability," Applied Physics Letters, vol. 127, no. 15, pp. 153302, Oct 2025.

- Q. Meng, R. H. El-Jaroudi, A. A. Dadey, C. White, J. C. Campbell, A. H. Jones, M. A. Wistey, and S. R. Bank, "Extended wavelength photodiodes in the B-III-V material system," Applied Physics Letters, vol. 127, no. 15, pp. 152103, Oct 2025.

- A. M. Garcia, W. J. Doyle, Y. Wang, M. L. Lee, D. Wasserman, and S. R. Bank, "High-quality GaP planar coalescence over embedded dielectric microstructures," Crystal Growth & Design, Oct 2025.

- E. Y. Wang, H. Karimi, F. Guzman, M. Waqar, A. W. K. Liu, J. Fastenau, X. Pan, J. C. Campbell, and S. R. Bank, "Ternary-containing Al0.7 InAsSb digital alloys on InP and InP-on-Si," Optical Materials Express, vol. 15, no. 10, pp. 2568-2575, Sep 2025.

- Z. Ye, T. D. Frazer, H. Cui, X. Jia, F. He, T. Ma, S. D. March, S. R. Bank, K. J. Harmon, Z. Zhang, J. Ravnik, M. Sander, Y. Deng, R. Mankowsky, H. Lemke, H. Wen, S. O. Hruszkewycz, S. Gerber, Y. Wang, Y. Wang, and Y. Cao, "Coherent phonon flatband generated in GaAs/AlAs superlattices via layer-selective optical pumping," Nature Communications, vol. 16, no. 1, pp. 8436, Sep 2025.

- C. White, F. A. Estévez, M. K. Bergthold, A. F. Ricks, H. Hijazi, L. C. Feldman, D. Wasserman, A. J. Muhowski, and S. R. Bank, "Decoupling the Effects of Surface Morphology and Bulk Substitutionality on Dilute-Bismide Optical Quality," Crystal Growth & Design, vol. 25, no. 20, Sep 2025.

- J. A. McArthur, A. A. Dadey, K. Circir, H. Karimi, D. Wei, E. Y. Wang, J. C. Campbell, and S. R. Bank, "Thin absorber AlInAsSb 2-um SACM APDs with very low and tunable dark currents at room-temperature," Applied Physics Letters, vol. 126, no. 26, pp. 261102, Jul 2025.

- Q. Lin, H. Karimi, D. J. Herrera, E. Y. Wang, S. R. Bank, and J. C. Campbell, "A passivation study for AlInAsSb avalanche photodiodes," Applied Physics Letters, vol. 127, no. 2, pp. 023302, Jul 2025.

- H. Wu, Y. Ju, L. Brown, M. Waqar, X. Yan, R. Ramesh, A. F. Ricks, S. R. Bank, and X. Pan, "Interfacial structure in GaAs/Al0.55 Ga0.45 As asymmetric coupled quantum wells revealed by advanced scanning transmission electron microscopy," Microscopy and Microanalysis, vol. 31, no. 7, pp. 2270-2272, Jul 2025.

- A. F. Ricks, R. C. White, Q. Meng, H. Hijazi, L. C. Feldman, M. A. Wistey, and S. R. Bank, "Interplay of Al and Bi Incorporation in AlInSbBi," Crystal Growth & Design, vol. 25, no. 13, pp. 4843–4849, Jun 2025.

- H. Karimi, D. J. Herrera, A. A. Dadey, D. Wei, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes," Optics Express, vol. 33, no. 4, pp. 7337-7344, Feb 2025.

- T. Kim, A. M. Skipper, S. R. Bank, and E. T. Yu, "Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions," Journal of Applied Physics, vol. 137, no. 7, pp. 075702, Feb 2025.

- M. S. Reza, T. Dey, A. W. Arbogast, Q. Meng, S. R. Bank, and M. A. Wistey, "Confinement and threshold modeling for high temperature GeSn and GeC/GeCSn lasers," IEEE J. Sel. Topics Quantum Electron., vol. 31, no. 1, pp. 1503011, Jan 2025.

- A. M. Garcia, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally calibrated modeling of periodic supply epitaxy for selective area growth by molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 4, pp. 963-969, Jan 2025.

- K. N. Dickson, L. Simmons, A. F. Ricks, A. M. Skipper, A. F. Briggs, A. J. Muhowski, S. R. Bank, and J. T. Gopinath, "Impact of mechanically applied strain on Auger recombination in InGaAs multiple quantum wells," Applied Physics Letters, vol. 126, no. 3, pp. 032105, Jan 2025.
