Publications
Journal Article
- T. Kim, A. M. Skipper, S. R. Bank, and E. T. Yu, "Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions," Journal of Applied Physics, vol. 137, no. 7, pp. 075702, Feb 2025.

- H. Karimi, D. J. Herrera, A. A. Dadey, D. Wei, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes," Optics Express, vol. 33, no. 4, pp. 7337-7344, Feb 2025.

- A. M. Garcia, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally calibrated modeling of periodic supply epitaxy for selective area growth by molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 4, pp. 963-969, Jan 2025.

- M. S. Reza, T. Dey, A. W. Arbogast, Q. Meng, S. R. Bank, and M. A. Wistey, "Confinement and threshold modeling for high temperature GeSn and GeC/GeCSn lasers," IEEE J. Sel. Topics Quantum Electron., vol. 31, no. 1, pp. 1503011, Jan 2025.

- A. A. Dadey, A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, "Separate absorption, charge, and multiplication staircase avalanche photodiodes," Applied Physics Letters, vol. 124, no. 8, pp. 081101, Dec 2024.

- J. A. McArthur, A. A. Dadey, K. Circir, S. D. March, X. Xue, D. Chen, A. H. Jones, A. Dolocan, J. C. Campbell, and S. R. Bank, "Source impurity contributions and polarity inverting in the unintentional doping of AlInAsSb digital alloys grown via molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 2, pp. 392-399, Dec 2024.

- J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024.

- R. C. White, M. Bergthold, A. Muhowski, L. Nordin, I. Okoro, H. Hijazi, L. Feldman, D. Wasserman, and S. R. Bank, "Molecular beam epitaxy of InAsSbBi lattice-matched to InSb toward long-wave infrared sensing," Crystal Growth & Design, vol. 24, no. 21, pp. 8727-8735, Oct 2024.

- R. K. Vinnakota, Z. Dong, A. F. Briggs, S. R. Bank, D. Wasserman, and D. A. Genov, "Response times of a degenerately doped semiconductor based plasmonic modulator," Journal of the Optical Society of America B, vol. 40, no. 5, pp. 978, Dec 2023.

- A. Jones, S. March, A. Dadey, A. Muhowski, S. R. Bank, and J. Campbell, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection," IEEE Journal of Quantum Electronics, vol. 58, no. 4, Dec 2022.
- B. B.Rajeeva, Z. Wu, A. F. Briggs, P. V. Acharya, B. Walker, X. Peng, V. Bahadur, S. R. Bank, and Y. Zheng, "Direct-Write Printing: ``Point-and-Shoot'' Synthesis of Metallic Ring Arrays and Surface-Enhanced Optical Spectroscopy," Advanced Optical Materials, vol. 6, no. 10, Dec 2018.

- J. C. Campbell, and S. R. Bank, "Low-Noise Digital Alloy Avalanche Photodiodes," Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF), pp. IW1B.5, Dec 2018.

- R. Salas, E. M. Krivoy, A. M. Crook, H. P. Nair, and S. R. Bank, "Improved conductivity of GaAs-based tunnel junctions containing ErAs nanostructures via compositional grading," Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box âŠ, Dec 2011.

- M. Wistey, U. Singisetti, G. Burek, B. J. Thibeault, A. Nelson, J. Cagnon, Y. Lee, S. R. Bank, S. Stemmer, A. C. Gossard, and M. J. Rodwell, "III-V/Ge Channel Engineering for Future CMOS," ECS Meeting Abstracts, vol. MA2009–01, no. 38, pp. 1336–1336, Dec 2009.

- R. Kudrawiec, P. Poloczek, J. Misiewicz, H. Bae, T. Sarmiento, S. R. Bank, H. Yuen, M. Wistey, and J. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–-1.65 µm: Broadening of the fundamental transition," Appl. Phys. Lett., vol. 94, no. 3, pp. 031903, Dec 2009.

- M. M. Oye, S. R. Bank, A. J. Ptak, R. C. Reedy, M. S. Goorsky, and A. L. Holmes, "Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N2/Ar source gas mixtures," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 26, no. 3, pp. 1058–1063, Dec 2008.

- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, and J. Misiewicz, "The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance," physica status solidi c, vol. 5, no. 2, pp. 473–477, Dec 2008.

- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, and J. Misiewicz, "Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content," physica status solidi (a), vol. 204, no. 2, pp. 364–372, Dec 2007.

- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, and J. Misiewicz, "The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance," physica status solidi (a), vol. 204, no. 2, pp. 543–546, Dec 2007.

- A. J. Ptak, D. J. Friedman, S. Kurtz, R. C. Reedy, M. Young, D. B. Jackrel, H. B. Yuen, S. R. Bank, M. A. Wistey, and J. S. Harris, "Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 3, pp. 1540–1543, Dec 2006.

- R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5ÎŒm," Solid State Communications, vol. 137, no. 3, pp. 138–141, Dec 2006.

- R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms," Applied Surface Science, vol. 253, no. 1, pp. 152–157, Dec 2006.

- R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, and o., "Surface physics, nanoscale physics, low-dimensional systems-Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0.," Physical Review-Section B-Condensed Matter 73 (24), 245413-245413, Dec 2006.

- D. Jackrel, H. Yuen, S. R. Bank, M. Wistey, J. Fu, X. Yu, Z. Rao, and J. S. Harris, "Thick lattice-matched GaInNAs films in photodetector applications," SPIE Proceedings Semiconductor Photodetectors II, vol. 5726, pp. 27, Dec 2005.

- S. R. Bank, H. Yuen, M. Wistey, V. Lordi, H. Bae, and J. Harris, "Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs," Appl. Phys. Lett., vol. 87, no. 2, pp. 021908, Dec 2005.

- R. Kudrawiec, M. Motyka, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, and o., "Photoluminescence from as-grown and annealed GaN0. 027As0. 863Sb0. 11â GaAs single quantum wells," Journal of applied physics 98 (6), Dec 2005.

- J. S. Harris, H. Yuen, S. R. Bank, M. Wistey, V. Lordi, T. Gugov, H. Bae, and L. Goddard, "MBE Growth and Characterization of Long Wavelength Dilute Nitride III–V Alloys," Dilute Nitride Semiconductors, pp. 1–92, Dec 2005.

- J. S. Harris, M. Wistey, S. R. Bank, L. Goddard, V. Lordi, H. Bae, and H. Yuen, "Long-wavelength Dilute Nitride-Antimonide Lasers," Dilute Nitride Semiconductors, pp. 507–578, Dec 2005.
