Publications

Displaying 532 publications
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Journal Article

  1. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, "Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)," Phys. Rev. Lett., vol. 94, no. 5, pp. 056601, Feb 2005. Digital object identifier
  2. R. Kudrawiec, P. Sitarek, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance," APL, vol. 86, no. 9, pp. 091115, Feb 2005. Digital object identifier
  3. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  4. R. Wang, X. Jiang, R. M. Shelby, R. M. Macfarlane, S. S. P. Parkin, S. R. Bank, and J. S. Harris, "Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing," APL, vol. 86, no. 5, pp. 052901, Jan 2005. Digital object identifier
  5. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier
  6. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1328-1332, Dec 2005. Digital object identifier
  7. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004. Digital object identifier
  8. J. S. Harris, S. R. Bank, M. A. Wistey, and H. B. Yuen, "GaInNAs(Sb) long wavelength communications lasers," IEE Proc. Optoelectron., vol. 151, no. 5, pp. 407-416, Oct 2004. Digital object identifier
  9. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier
  10. V. Lordi, H. B. Yuen, S. R. Bank, and J. S. Harris, "Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300\—1600 nm," APL, vol. 85, no. 6, pp. 902-904, Aug 2004. Digital object identifier
  11. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004. Digital object identifier
  12. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier
  13. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  14. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1. 460 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1562-1564, May 2004. Digital object identifier
  15. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier
  16. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  17. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  18. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  19. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  20. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  21. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002. Digital object identifier
  22. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier
  23. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier
  24. T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000. Digital object identifier

Conference Paper

  1. V. A. Podolskiy, J. LaMountain, A. Ware, C. White, S. R. Bank, D. Wasserman, and E. Narimanov, "Primordial metamaterials," Metamaterials, Metadevices, and Metasystems 2025, San Diego, California, Sep 2025.
  2. E. Y. Wang, J. A. McArthur, H. Karimi, J. C. Campbell, and S. R. Bank, "Effect of Uncracked Group V Species on Unintentional Doping Concentration in AlInAsSb," 39th North American Molecular Beam Epitaxy Conf. (NAMBE), Albuquerque, New Mexico, Aug 2025.
  3. A. F. Ricks, C. White, H. Hijazi, L. C. Feldman, and S. R. Bank, "Improved Bi Incorporation in InSbBi and AlInSbBi for Novel nBn Photodetectors," 39th North American Molecular Beam Epitaxy Conf. (NAMBE), Albuquerque, New Mexico, Aug 2025.
  4. A. Garcia, W. Doyle, Y. Wang, C. White, B. Aguilar, M. Lee, D. Wasserman, and S. R. Bank, "GaP Planar Coalescence Over Embedded Dielectric Gratings by Molecular Beam Epitaxy," 39th North American Molecular Beam Epitaxy Conf. (NAMBE), Albuquerque, New Mexico, Aug 2025.
  5. E. Y. Wang, J. A. McArthur, H. Karimi, J. C. Campbell, and S. R. Bank, "Effect of Uncracked Group V Species on Unintentional Doping Concentration in AlInAsSb," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  6. A. F. Ricks, C. White, H. Hijazi, L. C. Feldman, and S. R. Bank, "Improved Bi Incorporation in InSbBi and AlInSbBi for Novel nBn Photodetectors," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  7. W. Doyle, A. Garcia, B. Aguilar, S. R. Bank, and D. Wasserman, "Out-diffusion of Rubidium-87 from Thin Films for the Filling of Chip-Scale Vapor Cells," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  8. A. Garcia, W. Doyle, Y. Wang, C. White, B. Aguilar, M. Lee, D. Wasserman, and S. R. Bank, "GaP Planar Coalescence Over Embedded Dielectric Gratings by Molecular Beam Epitaxy," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  9. P. Devaney, K. C. Wen, R. Ramesh, A. F. Ricks, M. Waqar, M. Brown, C. Du, S. Esfahani, A. Alu, D. Wasserman, X. Pan, S. Shakkotai, and S. R. Bank, "Design of Large Engineered Second-Order Optical Nonlinearities with Machine Learning," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  10. J. Beardshear, E. Y. Wang, A. Ware, N. Mansfield, D. Wasserman, S. Shakkottai, and S. R. Bank, "Design and Optimization of Optical Spectra in AlGaInAsSb Digital Alloys for LWIR Photodetectors," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  11. B. D. Aguilar, A. McArthur, E. Y. Wang, H. Karimi, D. J. Herrera, E. Simmons, A. Talanov, K. Dorsey, J. C. Campbell, S. Shakkottai, and S. R. Bank, "Optimizing Surface Grating Structures or Enhanced Absorption in AlInAsSb Avalanche Photodiodes," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  12. N. C. Mansfield, Z. Sarkotic, A. Raju, A. Ware, D. Hungund, D. Krueger, E. Y. Wang, S. R. Bank, and D. Wasserman, "Infrared Metaplasmonics," 67th Electronic Materials Conf. (EMC), Durham, North Carolina, Jun 2025.
  13. P. U. Fathi, M. Ossiander, A. F. Ricks, K. Wen, T. Letsou, C. Spagele, P. Devaney, R. Ramesh, J. Duncan, A. Portes, J. Park, S. R. Bank, and F. Capasso, "Enhancing second harmonic generation with digital alloy usuing metasurfaces," Nonlinear Frequency Generation and Conversion: Materials and Devices XXIV), San Francisco, California, Mar 2025.
  14. B. D. Aguilar, A. M. García, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Effects of Molecular Beam Epitaxy Selective Area Growth Techniques on III-V Optical Quality," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  15. M. C. Cassidy, J. Duncan, A. M. García, W. J. Doyle, D. Wasserman, and S. R. Bank, "Selective Area Regrowth for Chipscale Trapped Atom/Ion Quantum Systems," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  16. P. Devaney, K. C. Wen, R. Ramesh, N. Irwin, A. F. Ricks, S. Shakkottai, and S. R. Bank, "Blackbox Machine Learning for Nonlinear Materials Design," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  17. T. Dey, A. W. Arbogast, Q. Meng, M. Reaz. Munna, K. Alam, S. R. Bank, and M. A. Wistey, "Influences of Carbon Tetrabromide (CBr4) and Tin Fluxes on GeCSn Growth," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  18. J. Duncan, R. Ramesh, A. F. Ricks, M. Brown, Z. Sakotic, F. A. Estévez, F. Shafiei, M. W. Downer, D. Wasserman, and S. R. Bank, "Optical Structuring to Reliably Determine Interband Optical Nonlinearity via Second Harmonic Generation," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  19. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  20. J. A. McArthur, A. A. Dadey, E. Y. Wang, H. Karimi, J. C. Campbell, and S. R. Bank, "Suppressing AlInAsSb Avalanche Photodiode Dark Currents by Tuning the Absorption Region," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  21. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, L. Gelczuk, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Improvement in Optical Quality Upon Annealing in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  22. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  23. A. F. Ricks, R. C. White, Q. Meng, H. Hijazi, M. A. Wistey, and S. R. Bank, "Bismuth Incorporation in AlInSb for an Improved Barrier Layer Material," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  24. A. F. Ricks, K. C. Wen, M. Brown, Z. Sakotic, M. Waqar, X. Pan, D. Wasserman, and S. R. Bank, "Coupled Quantum Well Interface Quality and Second-Harmonic Generation Effects," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  25. E. Y. Wang, J. A. McArthur, H. Karimi, P. Devaney, J. C. Campbell, and S. R. Bank, "Effect of Varying Period Structure on Tunneling Current in AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  26. E. Y. Wang, H. Karimi, M. Waqar, X. Pan, J. C. Campbell, and S. R. Bank, "Growth and Characterization of Ternary-Containing AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.